Patent number: 9040659
Abstract: The present invention relates to a method for treating a block copolymer solution, wherein the method comprises: providing a solution comprising a block copolymer in a non aqueous solvent; and, treating the solution to remove metals using an ion exchange resin. The invention also relates to a method of forming patterns using the treated block copolymer.
Type: Grant
Filed: February 7, 2014
Date of Patent: May 26, 2015
Assignee: AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L.
Inventors: Jian Yin, Hengpeng Wu, Muthiah Thiyagarajan, SungEun Hong, Mark Neisser, Yi Cao
Patent number: 8835581
Abstract: The present invention relates to a novel polymeric composition comprising a novel polymer having two or more repeat units and a terminus having the structure (1): wherein R1 represents a C1-C20 substituted or unsubstituted alkyl group, w is a number from 1-8, X is oxygen (O) or nitrogen (N), and Rd is a reactive group. The invention also relates to a process for forming a pattern using the novel polymeric composition. The invention further relates to a process of making the novel polymer.
Type: Grant
Filed: June 8, 2012
Date of Patent: September 16, 2014
Assignee: AZ Electronic Materials (Luxembourg) S.A.R.L.
Inventors: Hengpeng Wu, Orest Polishchuk, Yi Cao, SungEun Hong, Jian Yin, Guanyang Lin, Margareta Paunescu, Mark Neisser
Publication number: 20140151330
Abstract: The present invention relates to a method for treating a block copolymer solution, wherein the method comprises: providing a solution comprising a block copolymer in a non aqueous solvent; and, treating the solution to remove metals using an ion exchange resin. The invention also relates to a method of forming patterns using the treated block copolymer.
Type: Application
Filed: February 7, 2014
Publication date: June 5, 2014
Applicant: AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L.
Inventors: Jian YIN, Hengpeng WU, Muthiah THIYAGARAJAN, SungEun HONG, Mark NEISSER, Yi CAO
Publication number: 20130330668
Abstract: The present invention relates to a novel polymeric composition comprising a novel polymer having two or more repeat units and a terminus having the structure (1): wherein R1 represents a C1-C20 substituted or unsubstituted alkyl group, w is a number from 1-8, X is oxygen (O) or nitrogen (N), and Rd is a reactive group. The invention also relates to a process for forming a pattern using the novel polymeric composition. The invention further relates to a process of making the novel polymer.
Type: Application
Filed: June 8, 2012
Publication date: December 12, 2013
Applicant: AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L.
Inventors: Hengpeng WU, Orest POLISHCHUK, Yi CAO, SungEun HONG, Jian YIN, Guanyang LIN, Margareta PAUNESCU, Mark NEISSER
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Publication number: 20120328990Abstract: The present invention relates to an underlayer composition comprising a polymer, an organic titanate compound and optionally a thermal acid generator, where the polymer comprises at least one fluoroalcohol group and at least one epoxy group. The invention also relates to a process for using this underlayer material as an antireflective coating composition and/or a hard mask for pattern transfer.Type: ApplicationFiled: June 21, 2011Publication date: December 27, 2012Applicant: AZ ELECTRONIC MATERIALS USA CORP.Inventors: Huirong YAO, Guanyang LIN, Zachary BOGUSZ, PingHung LU, WooKyu KIM, Mark NEISSER
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Patent number: 8329387Abstract: The present invention relates to an antireflective coating composition comprising a novel polymer without an aromatic chromophore, where the polymer comprises a structural unit derived from an aminoplast and a structural unit derived from a diol, triol, dithiol, trithiol, other polyols, diacid, triacid, other polyacids, diimide or mixture thereof, where the diol, dithiol, triol, trithiol, diacid, triacid, diimide, diamide or imide-amide optionally contain one or more nitrogen and/or sulfur atoms or contain one or more alkene groups. The invention also relates to the novel polymer and a process for using the novel antireflective coating composition in a lithographic process.Type: GrantFiled: July 8, 2008Date of Patent: December 11, 2012Assignee: AZ Electronic Materials USA Corp.Inventors: Huirong Yao, Guanyang Lin, Jian Yin, Hengpeng Wu, Mark Neisser, Ralph Dammel
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Publication number: 20120202155Abstract: The invention relates to an underlayer coating composition comprising a polymer, where the polymer comprises at least one hydroxyaromatic unit in the backbone of the polymer phenol which has a pendant group comprising a fluoro or iodo moiety, and at least one unit comprising an aminoplast. The invention further relates to a process for forming an image using the composition, especially for EUV.Type: ApplicationFiled: February 8, 2011Publication date: August 9, 2012Inventors: Huirong Yao, Zachary Bogusz, Guanyang Lin, Mark Neisser
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Patent number: 8211621Abstract: The present invention discloses novel bottom anti-reflective coating compositions where a coating from the composition has an etch rate that can be regulated by the etch plate temperature.Type: GrantFiled: June 10, 2010Date of Patent: July 3, 2012Assignee: AZ Electronic Materials USA Corp.Inventors: David Abdallah, Francis Houlihan, Mark Neisser
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Publication number: 20110300488Abstract: The invention related to an antireflective coating comprising a mixture of a first polymer and a second polymer, and a thermal acid generator, where the first polymer comprises at least one fluoroalcohol moiety, at least one aliphatic hydroxyl moiety, and at least one acid moiety other than fluoroalcohol with a pKa in the range of about 8 to about 11; where the second polymer is a reaction product of an aminoplast compound with a compound comprising at least one hydroxyl and/or at least one acid group. The invention further relates to a process for using the novel composition to form an image.Type: ApplicationFiled: June 3, 2010Publication date: December 8, 2011Inventors: Huirong Yao, Jain Yin, Guanyang Lin, Mark Neisser, David Abdallah
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Publication number: 20110250544Abstract: Antireflective coating compositions are discussed.Type: ApplicationFiled: June 16, 2011Publication date: October 13, 2011Applicant: AZ ELECTRONIC MATERIALS USA CORP.Inventors: Weihong Liu, Guanyang Lin, JoonYeon Cho, Jian Yin, Salem K. Mullen, Mark Neisser
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Patent number: 8026040Abstract: The present invention relates to a composition comprising: (a) a polymer having at least one repeating unit of formula where R1 is a non-hydrolysable group and n is an integer ranging from 1 to 3; and (b) a crosslinking catalyst. The composition is useful in forming low k dielectric constant materials and as well as hard mask and underlayer materials with anti-reflective properties for the photolithography industry.Type: GrantFiled: February 20, 2007Date of Patent: September 27, 2011Assignee: AZ Electronic Materials USA Corp.Inventors: Hengpeng Wu, WooKyu Kim, Hong Zhuang, PingHung Lu, Mark Neisser, David Abdallah, Ruzhi Zhang
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Publication number: 20100316949Abstract: The present invention relates to an organic spin on hard mask antireflective coating composition comprising a polymer comprising at least one unit of fused aromatic rings in the backbone of the polymer and at least one unit with a cycloaliphatic moiety in the backbone of the polymer. The invention further relates to a process for making the polymer and a process for imaging the present composition.Type: ApplicationFiled: June 10, 2009Publication date: December 16, 2010Inventors: M. Dalil Rahman, Douglas McKenzie, Guanyang Lin, Jianhui Shan, Ruzhi Zhang, Mark Neisser
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Publication number: 20100248137Abstract: The present invention discloses novel bottom anti-reflective coating compositions where a coating from the composition has an etch rate that can be regulated by the etch plate temperature.Type: ApplicationFiled: June 10, 2010Publication date: September 30, 2010Inventors: David Abdallah, Francis Houlihan, Mark Neisser
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Patent number: 7759046Abstract: The present invention discloses novel bottom anti-reflective coating compositions where a coating from the composition has an etch rate that can be regulated by the etch plate temperature.Type: GrantFiled: December 20, 2006Date of Patent: July 20, 2010Assignee: AZ Electronic Materials USA Corp.Inventors: David Abdallah, Francis Houlihan, Mark Neisser
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Publication number: 20100093969Abstract: The present invention relates to process for making a siloxane polymer which comprises at least one Si—OH group and at least one Si—OR group, where R is a moiety other than hydrogen, comprising reacting one or more silane reactants together in the presence of a hydrolysis catalyst in either a water/alcohol mixture or in one or more alcohols to form the siloxane polymer; and separating the siloxane polymer from the water/alcohol mixture or the alcohol(s).Type: ApplicationFiled: February 25, 2008Publication date: April 15, 2010Inventors: Ruzhi Zhang, David Abdallah, PingHung Lu, Mark Neisser